In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (∼4200Sm−1) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28K and at 8T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization.
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Mareš et al. (2006) studied this question.
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