The nonlocal effect of an inhomogeneous electric field on the carrier drift velocity is considered with particular reference to n-Si. A field-dependent phenomenological length constant, giving the first-order effect of the field gradient, is discussed in terms of the Boltzmann equation. It is also shown how this constant may be calculated from the actual effect of a small ‘‘step’’ in an otherwise homogeneous field, by a formula which extends a previously given formula for this case.
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Peter J. Price (1988) studied this question.
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