A pixel array of vertical Schottky-barrier diodes (SBDs) was fabricated and measured on the surface of a β-Ga 2 O 3 single crystal. Subsequently, etch pits and patterns were observed on the same surface. Three types of etch pits were discovered: (1) a line-shaped etch pattern originating from a void and extending toward the [010] direction, (2) an arrow-shaped etch pit whose arrow’s head faces toward the [102] direction and, (3) a gourd-shaped etch pit whose point head faces toward the [102] direction. Their average densities were estimated to be 5 × 10 2 , 7 × 10 4 , and 9 × 10 4 cm −2 , respectively. We confirmed no clear relationship between the leakage current in SBDs and these crystalline defects. Such results are obtained because threading dislocations run mainly in the [010] growth direction and do not go through the sample plate.
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Kasu et al. (2017) studied this question.