A low-voltage, micropower, curvature-corrected bandgap reference is presented that is capable of working down to input voltages of 1.1 V in a relatively inexpensive process, MOSIS 2 /spl mu/m technology. This is a vanilla N-well complementary metal-oxide-semiconductor process technology with an added P-base layer. Second-order curvature correction for this reference is accomplished by a versatile piecewise-linear current-mode technique. The 0.595 V precision reference achieved a line regulation performance of 408 ppm/V for input voltages between 1.2 and 10 V. The circuit only used 14 /spl mu/A of quiescent current flow.
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P.E. Allen (1998) studied this question.
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