Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy has been used to show that V-shaped surface pits on these samples differ from similar features observed in the InGaN system. Inversion domains and segregated Al are found in the middle of each V pit, and superlattice layers are observed to follow the pit sidewalls.
No takes yet. Share an insight, caveat, or question.
Pécz et al. (2001) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: