A 1–12‐GHz variable‐gain low‐noise amplifier MMIC using 0.25‐μm SiGe BiCMOS technology

This article introduces an 1–12‐GHz differential two‐stage variable‐gain low‐noise amplifier (VGLNA) using 0.25‐μm SiGe:C BiCMOS commercial process technology for ultra‐wideband system.The results of the fabricated monolithic microwave integrated circuit amplifier show 18‐dB gain with a 3‐dB frequency band of 1.3–11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5‐V supply voltage and 55‐mW total dc power consumption. The gain‐control range is from −17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1 × 0.9 mm2including all testing pads for RF and dc probes.