The composition and structure of anodic oxides about 400Å thick grown in either 3% tartaric acid/propylene glycol or electrolytes are investigated. The ion sputtering effects are taken into account to obtain quantitative chemical depth profiles. The oxide is inhomogeneous with an average Ga 3+ /(oxidized As) ratio of ∼3 and ∼1 in the surface region and the bulk of this oxide, respectively, while the tartaric acid‐grown oxide is homogeneous with a Ga 3+ /As 3+ ratio of ∼1 throughout the oxide film except in the interfacial region. In the outer layer (∼100Å) of the oxide, a large quantity of oxygen exists and the arsenic oxide is not but . In both ∼400Å thick anodic interfacial regions, whose width is ∼100Å, excess As exists and its quantity is approximately equal to the concentration difference between and in this region.
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Mizokawa et al. (1979) studied this question.