A method for the fabrication of in-plane submicron size intrinsic Josephson junctions by focused ion beam (FIB) has been developed. The method includes double-sided processing of thin layered single crystals by FIB and has been demonstrated on high quality BSCCO (2212) single crystal whiskers. The stacked junctions with in-plane area down to 0.3 /spl mu/m/sup 2/ have been fabricated without deterioration of superconducting transition temperature T/sub c/ and the superconducting energy gap /spl Delta/.
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Latyshev et al. (1999) studied this question.
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