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A non-chemically amplified resist (n-CAR) based on iodonium functionalized polystyrene (PSNA 0.4 ) was developed for extreme ultraviolet lithography, achieving 22 nm L/S patterns at a dose of 90.8 mJ cm −2 , underscoring its high sensitivity for n-CARs.
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Yao et al. (2024) studied this question.
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