An experimental study of defect production and annealing in dilute Ag(Cu) alloys

Three dilute Ag(Cu) alloys (containing 53, 120 and 210 at. PPM Cu) have been irradiated with electrons at three different temperatures within stage II (60, 95 and 150K). The defect production and annealing has been studied by means of electrical resistivity measurements. It was found that most of the radiation-induced resistivity (70-90% depending on the irradiation temperature) is retained up to 200K, indicating the occurrence of deep trapping. The apparent capture radius of self-interstitials by solute Cu atoms (relative to that by vacancies) decreases from R t (=r t /r v )>or=1 at 60K to R t approximately 0.15 at 150K, showing the importance of multiple trapping as well as the necessity of a detailed analysis.