A model to calculate the effective elastic modulus of a single crystal cantilever used as a substrate for magnetostrictive measurements of thin films is given. Calculations are presented for Si (110), sapphire (11̄00) (M plane) and (12̄10) (A plane) cantilevers. Numerical calculations using the finite element method for sapphire show a very high accuracy of the proposed model.
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Farber et al. (1999) studied this question.
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