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Recently, it has been theoretically predicted that Sb2Te3 and related materials are 3D topological insulators, a phase of matter that has a bulk bandgap and gapless electronic surface states protected by time-reversal symmetry. We report on low temperature magnetoresistance measurements on single crystalline Sb2Te3 nanowires with different cross sectional areas and high surface-to-volume ratios, synthesized via catalytic growth. The observation of Aharonov-Bohm oscillations and weak antilocalization indicates the presence of topological surface states.
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Hamdou et al. (2013) studied this question.
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