Amplitude/Phase Temperature Compensation Attenuators With Variable-Q FET Resonators

Amplitude/phase temperature compensation attenuators have been developed. The circuits are based on new variable-Qfield-effect transistor resonators. By employing the configuration, the dynamic range of the attenuation and the phase-shift can be flexibly determined. To verify this methodology, we have fabricated a low phase-shift temperature compensation attenuator and an amplitude/phase temperature compensation attenuator with monolithic microwave integrated circuit technology. The low phase-shift circuit achieved an attenuation dynamic range of 16.9 dB, a phase shift of± 5.2∘, and a minimum insertion loss of 4.5 dB inX-band over 75∘Ctemperature variation. The amplitude/phase compensation circuit achieved an attenuation dynamic range of 11.7 dB, a phase shift of+ 37∘, and a minimum insertion loss of 4.9 dB inX-band over 75\ ∘Ctemperature variation.