Radio frequency (RF) subsystems for emerging millimeter-wave applications require monolithic microwave integrated circuit (MMIC) attenuators with constant phase over the attenuation range. In this work, we present the results for a 44 GHz stepped attenuator implemented in high electron mobility transistor (HEMT) MMIC technology. Use of a switched-path topology provides a high attenuation range (>30 dB) with good phase flatness (14.5 dB) over the attenuation range. The same design topology should be well suited for other frequencies throughout the upper microwave and lower millimeter-wave range.
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Sjögren et al. (1998) studied this question.