Microelectromechanical Systems-Based Electrostatic Field Sensor Using Pb(Zr,Ti)O3 Thin Films

We have developed microelectromechanical system (MEMS)-based electrostatic field sensors using Pb(Zr,Ti)O 3 thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers have been fabricated into the sensors through MEMS microfabrication technology. The resonant frequency of the fabricated sensors is within 1700–1800 Hz. The developed MEMS-based electrostatic field sensors have shown a good linear response to the voltage of an electrified body, which is comparable to that of commercially available electrostatic field sensors.