The authors investigate the influence of two hole interfacial materials poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS) and aqueous solution-processed MoO3 (sMoO3) on cell stability. sMoO3-based device demonstrated obviously improved stability compared to PEDOT:PSS-based one. Current-voltage characteristics analysis is carried out to investigate the effect of the hole interfacial layers on the cell stability. The formation of additional trap states at the interfaces between the hole interfacial layer and the active layer in degraded devices is verified by a differential method. Improved cell stability is attributed to a relatively stable sMoO3 interfacial layer compared to PEDOT:PSS by comparing their different trap states distributions.
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Lou et al. (2014) studied this question.