Theoretical investigation of 2DEG concentration and mobility in the AlGaN/GaN heterostructures with various Al concentrations

Three‐scale model for the calculation of 2DEG mobility in AlGaN/GaN heterostructures developed by our group earlier was used for the investigation of the dependence of 2DEG concentration and mobility on the Al concentration in AlGaN layer. The model allows to calculate following 2DEG properties: energy levels, corresponding wavefunctions, potential energy distribution, charge carriers concentration distribution over the heterostructure. It is also possible to calculate electron mobility in 2DEG taking into account various scattering mechanisms. In the framework of this model the values of 2DEG concentration and mobility were calculated for various Al concentrations x in AlxGa1‐xN barrier (0.15 ≤ x ≤ 1). It is also taken into consideration that maximum barrier width should decrease with increasing Al concentration in order to allow pseudomorphic growth of barrier layer. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)