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The effect of light from intrinsic and impurity optical absorption regions on free-carrier mobility in nominally undoped indium monoselenide n-InSe crystals with the initial dark conductivity σ T0 = 10−3−10−8 Ω−1 cm−1 at 77 K is investigated under different external conditions. The dependences of free-carrier mobility, positive and negative mobility memories, and quenching of the mobility memory on ilumination are established. A model based on partial disorder of the investigated crystals is proposed: this model satisfactorily interprets the experimental data obtained.
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Абдинов et al. (2014) studied this question.
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