Transparent capacitors were prepared using BMN films grown from 25 to on AIZO/glass substrates (Corning 1737) by pulsed laser deposition. The BMN films grown at on the AIZO electrode exhibit a stable interface state between BMN and AIZO electrodes and the lowest root mean square roughness of 1 nm. The Pt/200 nm thick BMN/200 nm thick AIZO capacitors show dielectric constants of 50–68, dielectric losses of 2–3%, and leakage current densities of at 200 kV/cm in the range of growth temperatures. The AIZO/BMN/AIZO capacitors exhibit irregular variations in transmittance in the visible range and an optical transmittance of approximately 94% at a wavelength of 550 nm. Transparent AIZO/BMN/AIZO capacitors are possible candidates for integration with the transparent solar cells for the transparent system applications.
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Xian et al. (2009) studied this question.
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