Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors

Mixed self-assembled monolayers of C60-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.