Plasmonic resonances (λres's) at the telecommunication wavelengths of 1.3 and 1.55 μm can be accurately produced in ZnO layers grown at 200 °C by pulsed laser deposition in pure Ar ambient using a ZnO target with 3 wt. % Ga2O3, and then annealed in air to produce Hall-effect-determined carrier concentrations 8.8 and 6.0 × 1020 cm−3, respectively. Appropriate values of concentration and Hall mobility for a desired λres can be conveniently determined from a “plasmonic resonance phase diagram,” generated from the Drude equation and mobility theory. Values of λres as low as 1 μm can be attained in ZnO.
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Look et al. (2013) studied this question.
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