The role of electron concentration in the formation and stabilisation of inversion anti-phase domain (IAPD) arrays in γ-brass type phases is determined by a study of γ-phases in the Ni-Zn, Co-Zn, and FeZn systems. IAPD arrays form in Ni-Zn alloys in the range Ni-75 at%Zn to Ni-80 at%Zn but are not observed in the Co-Zn and FeZn γ-phases. These results together with previous results for γ-brass show that IAPD structures form only when e/a < 1.60. The stabilisation mechanism developed originally by Sato and Toth to explain the existence of long period structures in close-packed phases, involving the interaction of the Fermi surface with split Brillouin zones, provides good agreement between the observed and calculated variation of the period of the planar IAPD structure with electron concentration.
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A.J. Morton (1977) studied this question.
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