Carrier plasma shift in GaInAsP photonic crystal point defect cavity

A 1.43-µm-GaInAsP photonic crystal slab with a point defect cavity and line defect waveguides has been fabricated. A ∼1.5 µm-wavelength light is inserted into the waveguide and the cavity resonant spectrum observed. A 5.6 nm blue shift in the resonant peak arising from the carrier plasma effect by photopumping is also observed. These results will be applicable to all-optical switches and tunable devices.