This paper presents a study on techniques for characterization of metal-oxide-semiconductor field-effect transistor (MOSFET) transconductance mismatch, using matched pairs with intentional 1% dimensional offsets. The relevance of this kind of work is demonstrated by the introduction of a new mismatch phenomenon that can be attributed to mechanical strain, associated with metal dummy structures that are required for backend chemical mechanical polishing (CMP) processing steps.
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Tuinhout et al. (2001) studied this question.
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