Polarization effects on carrier injection and light emission are considered by modeling with reference to single‐quantum‐well blue light emitting diode heterostructures of either Ga‐ or N‐polarity. The model accounts for specific features of nitride semiconductors, spontaneous and piezo‐polarization, strong non‐radiative recombination on threading dislocation cores, complex valence band structure, etc., and allows detailed analysis of the device operation. The modeling results are compared with available observations. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Karpov et al. (2004) studied this question.
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