We show SiC substrate phonon-induced surface plasmon polariton (SPP) formation in epitaxial graphene grown on 4H–SiC, in SiC’s restrahlen band (8–10 μm). By fitting measurement to theory, we extract thickness, momentum scattering time (τ), sheet carrier density (ns), and estimate carrier mobility. By showing that τ∝1ns, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. SPP formation finds application in nanophotonic devices for optical computing because of graphene’s unique plasmonic properties.
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Daas et al. (2011) studied this question.
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