Epitaxial Fe34Co66 films in a thickness range from 3 to 100 monolayers (MLs) were grown by molecular beam epitaxy on GaAs(001) at room temperature. The growth was characterized by reflection high energy electron diffraction and x-ray diffraction. The magnetic properties were investigated by alternating gradient magnetometry magneto-optic Kerr effect, and superconducting quantum interference device magnetometry. The films show a strong interface-induced uniaxial in-plane anisotropy with the easy axis along [110]. In addition, the fourfold anisotropy coefficient changes sign around 6 ML i.e., the easy axis of the fourfold anisotropy switches from 〈110〉 to 〈100〉 with decreasing thickness.
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Dumm et al. (2000) studied this question.
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