We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current–density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made.
No takes yet. Share an insight, caveat, or question.
Schneider et al. (2001) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: