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In this paper, we present an in-depth investigation on the effects of epitaxial lift-off (ELO) on GaAs MESFET's. DC and microwave characteristics as well as thermal effects are considered. Devices were fabricated on a GaAs foundry process and transplanted by ELO. ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently re-attached to a new host substrate. Host materials considered are InP, quartz and silicon with resistivities ranging from 11 m/spl Omega/cm to 50 /spl Omega/cm.
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Morf et al. (1998) studied this question.
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