Production of Thermoluminescent Dosimetry (TLD) Chip from LiF Powder using Thermal Process Method and Comparing Energy and Density of its Traps with TLD100

Researchers have done many experiments to improve their dosimetry properties by adding impurities to Thermoluminescent (TL) materials. Adding impurities to the TL material requires cost, time, and equipment. The purpose of this study was to construct Thermoluminescent Dosimetry (TLD) chips through different thermal processes at temperatures near the melting point of Lithium Fluoride powder without adding impurities to improve their dosimetry properties, therefore without the additional expense of Lithium Fluoride chips similar to LiF: Mg, Ti (TLD100) chips were made. In this study, it was observed that when new TLD chips made of Lithium Fluoride powder were heated to 830 °C and cooled rapidly, they had an almost identical TL glow curve and temperature TM of maximum TL intensity (glow peak) TLD100. On the other hand, in this paper, we used three analysis methods to determine the trap depth (E) and contraction of trapped electrons (n). Computational equations such as Randall-Wilkins [1], Garlick-Gibson [2], Methods of Analysis Employing the Whole TL Glow Curve, and computerized curve fitting procedures were used to determine the concentration and energy of traps made of chips and compared with the concentration and energy of TLD100 traps.