The optimization of an InAs0.91Sb0.09 based infrared detector has been performed. The importance of the interfaces between the active region and the contacts in generation recombination phenomena is demonstrated. The two sides of the active region are optimized independently through heterostructure band gap engineering. The use of an Al0.15In0.85As0.91Sb0.09 quaternary makes it possible reach a detectivity of 4.4×109cm√Hz∕W at 290 K and 1.4×1010cm√Hz∕W at 250 K at 3.39μm, offering the perspective of a noncryogenic infrared imaging in the 3–5μm band with quantum detectors.
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Carras et al. (2005) studied this question.
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