Answers are grounded in this paper and cite their sources.
To dope VO2 thin films ion implantation is used and compared with other doping technologies. Argon, boron, and phosphorus are chosen as doping materials. The influence of doping on the resistance—temperatur dependence of the VO2 thin films is measured in different annealing states after implantation. Doping with P-ions results in a strong decrease of the transition temperature, while an influence of doping with Ar- and B-ions is not observed.
No takes yet. Share an insight, caveat, or question.
K.‐D. Ufert (1977) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: