Mid Wavelength Type II InAs/GaSb Superlattice Photodetector Using SiOxNy Passivation

We report on a mid wavelength (MW) type II InAs/GaSb superlattice (SL) photodetector structure using SiO x N y as the passivation material. The 50% cutoff wavelength of the photoresponse is 4.8 µm at 77 K. R 0 A, the resistance-and-area product at zero bias, is 2.1×103 Ω·cm2 for the device with the SiO x N y passivation, which is about 13 times larger than that without the passivation. Our result indicates SiO x N y passivation is an effective way to reduce the shunt current for MW InAs/GaSb SL photodetector.