A survey of conventional etchants for GaAs shows them to be inappropriate for GaSb . The reasons for this are investigated and a novel etch for GaSb proposed. This etchant, consisting of HCl / H 2 O 2 / NaK (tartrate) solutions, gives controllable etch rates from 0.1 to 2.0 μm min −1 . Smooth surfaces free from etch pits and surface films are obtained.
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Buglass et al. (1986) studied this question.
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