In situ control of the focused-electron-beam-induced deposition process

A simple quantitative method for in situ control of the focused-electron-beam-induced deposition process is discussed and demonstrated with precursors used for Au, Cu, Rh, and SiO2 deposition. A picoamperemeter monitors the electron current flowing through the sample, which reproducibly drops at a characteristic rate to a plateau value during deposition. These parameters are correlated to deposit geometry, composition, and precursor supply. Monte Carlo simulations of electron backscattering and secondary electron emission by the growing structures show excellent agreement with the experiment. The method could apply to a wide range of charged-particle deposition and etching processes.