We have demonstrated controllable threshold voltage (Vth) shifts of gold nanoparticles (Au NPs)/poly (3-hexylthiophene) (P3HT) based composite transistors that are fabricated through a low temperature facile technique. By varying the doping concentration of gold nanoparticles in P3HT matrix, Vth has been tuned from 12 V to 27 V without device degradation. Using this technique, the switching voltages of unipolar inverters have also been systematically tuned. Efficient hole conduction and a variation in P3HT crystallinity was observed due to different concentrations of Au NPs which eventually shift the threshold voltage of the devices in a controlled manner.
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Han et al. (2012) studied this question.
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