Transparent High‐Performance Thin Film Transistors from Solution‐Processed SnO2/ZrO2 Gel‐like Precursors

Adv. Mater. 2013, 25, 1042–1047 The authors would like to note an important correction, due to an error in the analysis. In this work, it was noted that high mobility values of ca. 100 cm2 V−1 s−1 are achievable in SnO2/ZrO2 thin-film transistors when annealed in air at 400 °C. The authors have continued to work with this material system, and have discovered that there is in fact a significant dispersive behavior in the ZrO2 dielectric when annealed at lower temperatures, including the aforementioned 400 °C anneal. This has resulted in an underestimation of the dielectric constant at DC/quasi-static conditions, and hence an over-estimation of the mobility under these conditions. In fact, the optimal condition to achieve the highest mobility in this system has been found to be in the range of 500 °C in air, since there is a suppression of the aforementioned dispersion upon adequate annealing. The observed mobility is ca. 40 cm2 V−1 s−1 under these conditions; in other words, this still represents an excellent result for a solution-processed oxide system, but is not as high as previously stated. Importantly, this mobility value has been verified by measuring the transition frequency of the TFT, and the mobility has been found to be reflected in a correct transconductance value even at sufficiently high frequencies to exclude the observed dispersive effects. All the other figures and data in the paper are still correct, to the authors' knowledge.