A three terminal Josephson junction with a semiconducting two-dimensional electron gas layer

We have performed simple model calculations of a three terminal, voltage regulated superconducting device. It consists of superconducting source and drain electrodes separated by a controlled weak superconducting link, i.e. a semiconductor where the charge carrier concentration can be varied by a gate voltage. The gate is separated from the semiconductor by a thin insulator and a two-dimensional electron gas (2DEG) can be induced at the semiconductor surface in the case of strong inversion. The 2DEG transport properties determine the supercurrent flow between the electrodes. The device I-V characteristics have been calculated for several gate voltages using parameters typical for SiO2/p-InSb and AlGaAs/p-GaAs junctions.