Effects of the interface bonding type on the optical and structural properties of InAs-AlSb quantum wells

InAs-AlSb short period superlattices were grown with both InSb-like or AlAs-like interfaces and their properties were studied using photoluminescence, x-ray diffraction, and transmission electron microscopy. A shift of 96 meV in the photoluminescence peak position is observed, with the peak from the sample with InSb-like interfaces being at a lower energy. The shift is interpreted as an interface band structure effect. X-ray diffraction patterns indicate that the sample with InSb-like interfaces grows pseudomorphically to the AlSb buffer layer, while the sample with AlAs-like interfaces is heavily dislocated. Transmission electron micrographs confirm the x-ray data.