Zinc oxide grown by atomic layer deposition - a material for novel 3D electronics

Last years we observe a booming interest in materials which can be successfully grown at low temperature limits showing good structural and electrical characteristics. This trend is closely related to the novel three-dimensional (3D) architecture which seems to be a prospective solution for miniaturization of electronic devices after the 22 nm node. We demonstrate that electrical parameters of ZnO grown by the atomic layer deposition (ALD) method at low temperature limit (100–200 °C) fulfil requirements for 3D electronic devices, because electron carrier mobility is above 10 cm2/Vs and n concentration at the level of 1 × 1017 cm−3.