The formation of boron-doped p+ layers that are transparent to minority-carrier transport is reported. Ion implantation is used to limit the peak dopant concentration to 5×1018 cm−3 so as to avoid deleterious heavy doping effects. Solar cell open circuit voltage of 657 mV has been obtained in this way. The importance of surface passivation is indicated.
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Spitzer et al. (1985) studied this question.
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