ZnO thin films with the c-axis orientation on the (0001) sapphire substrate were grown by metal-organic chemical vapour deposition. It was demonstrated that the VI/II precursor flow-rate ratio can influence strongly on the structure and opto-electrical properties. With the increasing VI/II ratio of 130:1, the full width at half maximum of (0002) peak in x-ray diffraction is only 0.184°, the near-band-edge emission enhances remarkably and the intensity ratio of the near-band-edge emission to the deep-level emission reaches 237:1 in the photoluminescence spectrum. At the same time, the resistivity and mobility increases to 3.28 × 10 2 Ω·cm and 25.3 cm 2 V -1 s -1 . These facts indicates that the quality of the ZnO thin films could be improved by increasing the VI/II flow rate ratio during the growth.
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Ma et al. (2003) studied this question.
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