Si/NiFe seed layers prepared at room temperature is effective to attain better c-axis orientation of Ru intermediate layer in the FeCoB/Ru/CoPtCr-SiO2 granular type recording tape media. The crystallinity and c-axis orientation of Ru layer with Si/NiFe seed layers were improved than that without Si/NiFe seed layer deposited on the laminated FeCoB SULs. When the Ru is thicker than 8 nm, Δθ50 of the CoPtCr-SiO2 recording layer shows small value of about 6.5°. Furthermore, even though the Ru thickness was only 3 nm, the Δθ50 retained comparatively small value of 8.0°. Si/NiFe layer is effective as a seed layer for the Ru intermediate layer.
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Saemma et al. (2012) studied this question.
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