Doping of Zn3P2thin films during growth using the hot wall deposition technique and some properties of the grown films

The dimensions of the hot wall deposition system (HWD) have been optimised for the growth of good crystalline quality Zn 3 P 2 thin films. The growth conditions have been standardised for the optimal length to radius ratio of the system for film deposition on mica and glass substrates. The crystallinity of the films grown at various substrate temperatures ranging from 180 degrees C to 350 degrees C were checked using X-ray analysis. The electronic transport properties were studied as a function of growth conditions. The growth temperature was shown to influence strongly the electrical conductivity. The HWD system was suitably modified to incorporate the desired amount of dopant during growth. The resistivity was brought down to 10 2 Omega cm by silver doping. The transport properties of the doped films were studied. Schottky barriers were formed on doped Zn 3 P 2 films grown on silver-coated glass substrates using Mg, Al and In. I-V and C-V measurements on these metal contacts were also carried out.