The influence of strong magnetic field on the 1/f noise in AlGaN/GaN metal‐oxide‐Semiconductor heterostructure field effect transistors (MOSHFETs) has been studied. The independence of 1/f noise on the magnetic fields up to 10 T where the strong geometric magneto‐resistance has been observed, shows that the carrier number fluctuations is the dominant mechanism of the noise in these devices. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Dyakonova et al. (2005) studied this question.
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