A GaAs-based high electron mobility metal-oxide-semiconductor field effect transistor (MOSFET) is fabricated using wet thermal oxidation of AlAs. Enhanced transport properties and interface smoothness result from use of a pseudomorphic In0.2Ga0.8As channel layer, yielding a high transconductance of 50 mS/mm (5 µm gate length).
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DeMelo et al. (2000) studied this question.
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