The temperature dependence of the MOSFET parameters as well as the freeze-out and carrier multiplication effects on the DC characteristics of submicrometer CMOS inverters, operated over the whole ambient temperature range of 4.2-300 K, are discussed. The observed degradation of the inverter performance below 50 K is attributed to freeze-out and carrier multiplication effects.>
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Gutiérrez-D et al. (1992) studied this question.
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