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In this paper, we report the fabrication and photoresponsive characteristics of MoSe2 phototransistors decorated with Au nanoseeds. The Au nanoseeds were excellently deposited onto the MoSe2 phototransistors by electron-beam evaporation with an extremely low deposition rate. This simple but effective method improved the photoresponsivity of the MoSe2 phototransistor by 276% compared to that of a pristine MoSe2 phototransistor, owing to the surface plasmon resonance effect of the Au nanoseeds. The results reveal that this method can provide a promising route for achieving high-performance photosensors.
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Hong et al. (2021) studied this question.
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