Random and channeling stopping powers and charge-state distributions in silicon for 0.2–1.2 MeV/u positive heavy ions

Stopping powers and equilibrium charge-state distributions for 0.2--1.2 MeV/u ⁷Li, ¹¹B, ¹²C, ¹⁴N, ¹⁶O, ³¹P, and ³⁵Cl ions, measured in transmission of a 780 nm crystalline silicon foil, are reported. Using a high-resolution electrostatic analyzer, ion energy loss was determined within ±{}3%. The thickness of the Si foil was measured independently by Rutherford backscattering and SEM with an uncertainty of about 3--4 %. The random and channeling stopping powers were estimated within approximately ±{}5%, fitted using an empirical expression, and compared with the TRIM95 database. Resulting differences between the fitted and the empirical stopping powers were in the range of 5--15%, depending on ion species and incident beam energy. The equilibrium charge fractions were determined within about ±{}4% for most cases. At small angles to the {110} plane, the energy-loss spectra exhibit a multiple peak structure, primarily due to trajectory selection.