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Detailed comparisons have been made of temperatures measured by an infrared transmission (IRT) technique and traditional optical pyrometry during the molecular-beam epitaxial growth of GaAs, AlSb, GaSb, and InAs on undoped semi-insulating (SI) GaAs, blackened SI GaAs, and heavily silicon-doped N+ GaAs substrates in indium-free mounts. These comparisons indicate that IRT and optical pyrometry measurements show excellent agreement (±7 °C at most) over the 400–600 °C temperature range, if extreme care is taken to minimize pyrometer errors caused by stray light and coating of the pyrometer window.
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Katzer et al. (1993) studied this question.
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